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High performance distributed Bragg reflector microwave resonator

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2 Author(s)
C. A. Flory ; Hewlett-Packard Co., Palo Alto, CA, USA ; R. C. Taber

A new resonator device structure is described that achieves Q-factors well above those currently realizable. The new structure consists of a microwave cavity, for which the enclosure walls consist of Distributed Bragg Reflectors (DBR) made of low-loss sapphire. For this configuration, most of the resonant field resides in empty space, with small field strengths in the thin layers of sapphire which comprise the DBR structure. The physical structure takes the form of interpenetrating concentric rings and plates of low-loss sapphire contained in a cylindrical metal enclosure. The theoretical analysis of the DBR resonant structure allows the positions and dimensions of the component rings and plates to be precisely determined for a specified resonant frequency. The resonator Q can be accurately calculated, and plots of the resonant fields clearly show the physical mechanism leading to the observed efficiency of this resonator structure. Experimental results are given for resonators designed at 9.0 and 13.2 GHz. The measured unloaded Q's at room temperature are over 650,000 and 450,000 respectively

Published in:

Frequency Control Symposium, 1996. 50th., Proceedings of the 1996 IEEE International.

Date of Conference:

5-7 Jun 1996