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Analysis of thermal behaviors of Spin-Torque-Transfer RAM: A simulation study

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4 Author(s)
Subho Chatterjee ; School of ECE, Georgia Institute of Technology, Atlanta GA-30332 ; Sayeef Salahuddin ; Satish Kumar ; Saibal Mukhopadhyay

We present an accurate model of the self-heating effect in the Spin-Torque-Transfer RAM (STTRAM) using finite-volume-methods and thermal RC based compact models. We couple device level thermal simulation to the self-heating phenomenon to show that self-heating during write operation can result in significant temperature increase in STTRAM which in turn adversely affect the read disturb, leakage energy and sensing accuracy.

Published in:

Low-Power Electronics and Design (ISLPED), 2010 ACM/IEEE International Symposium on

Date of Conference:

18-20 Aug. 2010