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Comments on "A practical end-of-life model for semiconductor devices" [with reply]

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2 Author(s)
J. L. Stevenson ; Intelsat, Washington, DC, USA ; M. S. Ash

Several observations are made on the above-named work by M.S. Ash and H.C. Gorton (see ibid., vol.38, no.4, p.485-93, Oct. 1989) concerning gradual performance deterioration in semiconductor devices. The commenter suggests that the development of predictive tools for reliability assessments involving long-term deterioration in such devices requires that careful attention be paid to the operational physics of the device, including temperature-dependent characteristics. An author's reply is included.<>

Published in:

IEEE Transactions on Reliability  (Volume:39 ,  Issue: 2 )