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TiN thin film resistors for monolithic microwave integrated circuits

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4 Author(s)
Malmros, Anna ; Department of Microtechnology and Nanoscience—MC2, Microwave Electronics Laboratory, Chalmers University of Technology, Gothenburg SE-412 96, Sweden ; Sudow, M. ; Andersson, Kristoffer ; Rorsman, N.

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Titanium nitride (TiN) thin film resistors (TFRs) have been fabricated by reactive sputter deposition. The TFRs were characterized in terms of composition, thickness, and resistance. Furthermore, a first assessment of the resistor reliability was made by measurements of the resistivity (ρ) versus temperature, electrical stress, long-term stability, and thermal infrared measurements. TiN layers with thicknesses up to 3560 Å, corresponding to a sheet resistance (Rs) of 10 Ω/◻, were successfully deposited without any signs of stress in the films. The critical dissipated power (Pc) showed a correlation with the resistor footprint-area indicating that Joule-heating was the main cause of failure. This was partly substantiated by the thermal infrared measurements.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 5 )