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Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

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9 Author(s)
Petit-Etienne, Camille ; CNRS-LTM, 17, rue des martyrs, 38054 Grenoble Cedex, France ; Darnon, Maxime ; Vallier, Laurent ; Pargon, Erwine
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Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed during HBr/O2/Ar based plasma overetch steps of gate etch processes. This phenomenon generates the so-called silicon recess in the channel and source/drain regions of the transistors. In this work, the authors compare the silicon recess generated by continuous wave HBr/O2/Ar plasmas and synchronous pulsed HBr/O2/Ar plasmas. Thin SiO2 layers are exposed to continuous and pulsed HBr/O2/Ar plasmas, reproducing the overetch process conditions of a typical gate etch process. Using in situ ellipsometry and angle resolved X-ray photoelectron spectroscopy, the authors demonstrate that the oxidized layer which leads to silicon recess can be reduced from 4 to 0.8 nm by pulsing the plasma in synchronous mode.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 5 )