Cart (Loading....) | Create Account
Close category search window
 

Inline composition and thickness control of SiON, HfSiON gate films using VUV capable spectroscopic ellipsometer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Rangarajan, S. ; IBM Corp., Hopewell Junction, NY, USA ; Shepard, J. ; Min Dai ; MacNish, S.
more authors

The area of gate metrology in the semiconductor fabrication process is being challenged with stringent thickness and composition control requirements. Control of component thicknesses and compositions of nitrided gate oxides and complex Hi-K film stacks has become a critical requirement for process development and control. Implementation of lab based techniques like XPS, XRF, XRR, SIMS, EXES etc. in the automated semiconductor fab environment is relatively novel and primarily in the development phase. Optical ellipsometry has typically been used for thickness control and rarely for estimation of volume fractions in composite films. This paper discusses the implementation of an extended UV (155 nm - 800 nm) spectroscopic ellipsometer for inline monitoring of various gate dielectric films viz. SiON and HfSiON. Results demonstrate the sensitivity of the technique to process variations, short term precision and long term stability that enable its implementation in an high volume automated fab for routine process monitoring. Some hardware enhancements required to make such measurements viable is also discussed. Efficient implementation of acquisition routines enables this enhanced composition metrology capability at higher throughput compared to typical X-ray based techniques that are naturally slower. The superior optics and sensors also provide enhanced long term stability.

Published in:

Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI

Date of Conference:

11-13 July 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.