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Thermal analysis of 8-T SRAM for nano-scaled technologies

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3 Author(s)
Meterelliyoz, M. ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Kulkarni, J.P. ; Roy, K.

Different sections of a cache memory may experience different temperature profiles depending on their proximity to other active logic units such as the execution unit. In this paper, we perform thermal analysis of cache memories under the influence of hot-spots. In particular, 8-T SRAM bit cell is chosen because of its robust functionality at nano-scaled technologies. Thermal map of entire 8-T SRAM cache is generated using hierarchical compact thermal models while solving the leakage and temperature self consistently. The impact of spatial temperature variations on 8T-SRAM parameters such as local bitline (LBL) sensing delay, noise robustness and bitcell stability are evaluated for 45nm/32nm/22nm bulk CMOS technology nodes. The effectiveness of variable keeper sizing on LBL sensing delay is analyzed. It is predicted that at 22 nm node, the leakage induced temperature rise has severe effects on the 8-T SRAM characteristics.

Published in:

Low Power Electronics and Design (ISLPED), 2008 ACM/IEEE International Symposium on

Date of Conference:

11-13 Aug. 2008

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