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Empirical modeling of GaN FETs for nonlinear microwave circuit applications

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2 Author(s)
Santarelli, A. ; Univ. of Bologna, Italy ; Di Giacomo, V.

A new approach for the electro-thermal modeling of GaN FETs is presented. The model is identified on-wafer through static I/V curves measured at different base plate temperatures and small-signal parameters. Improvements in the prediction of the dc drain current component under large-signal operation can be obtained by taking into account nonlinear dynamics of charge trapping phenomena. The use of measured pulsed-I/V characteristics is avoided in the model extraction phase. Identification procedures and a wide experimental validation for a 0.25 um AlGaN/GaN HEMT on SiC with 600 um periphery are provided in the paper.

Published in:

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Date of Conference:

23-28 May 2010

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