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THz Electronics projects at DARPA: Transistors, TMICs, and amplifiers

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4 Author(s)
Albrecht, J.D. ; Defense Advanced Research Projects Agency, Arlington, United States ; Rosker, M.J. ; Wallace, H.B. ; Chang, T.

Revolutionary THz transmitter and receiver demonstrations are the ongoing focus of a portfolio of programs within the DARPA. Through the sponsorship of the Terahertz Electronics and related programs, a technology base is being established to effectively generate, detect, process, and radiate sub-MMW frequencies to exploit this practically inaccessible frequency domain for imaging, radar, spectroscopy, and communications applications. Transistors, integration technologies, power amplification, and their precision metrology are the key elements under active investigation. THz InP transistors have been achieved that have enabled the world's fastest 0.48 THz monolithic integrated circuits. Compact THz high power amplifiers using micro-machined vacuum electronic devices will enable radiation sources at 1.03 THz with 15 GHz of instantaneous bandwidth. Ultimately, low-loss interconnects and integration techniques will couple TMICs with HPAs to enable THz coherent heterodyne transceivers.

Published in:

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Date of Conference:

23-28 May 2010