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Using layer transfer and wafer bonding followed by epitaxial regrowth, we design, realize, and characterize a novel generation of Germanium-on-Glass (GoG) near-infrared light sensors. In particular, we demonstrate GoG p-n junction photodetectors and GoG solar cells. In terms of performance, GoG junctions compare well with Germanium (Ge) structures on either Ge or Si. The photodiodes show a minimum dark current density of 50 μA/cm2 at 1 V reverse voltage and a maximum sensitivity of 280 mA/W at 1.55 μm and 5 V bias; the solar cells exhibit conversion efficiencies as high as 2.41% and fill factors of 53%, similar to structures grown on crystalline Ge substrates.