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Germanium surface hydrophilicity and low-temperature Ge layer transfer by GeSiO2 bonding

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7 Author(s)
Xiaobo Ma ; State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China and Department of Physics and Material Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China ; Weili Liu ; Xiaofeng Du ; Xuyan Liu
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Wafer bonding and layer transfer are two fundamental technologies in the fabrication of advanced microsystems. In the authors’ experiments, prior to Ge wafer bonding, the hydrophilicity of the germanium surface after wet chemical treatment and O2/N2 plasma activation is evaluated by contact angle measurement. The effects and mechanism of wet or dry treatments on the Ge surface roughness are also characterized. The results are used to tailor the GeSiO2 direct bonding process. Finally, oxygen plasma activation for 10 s and B+/H+ coimplantation are employed to facilitate GeSiO2 direct bonding and Ge layer transfer at a low temperature. In comparison with hydrogen only ion implantation using the same fluence, coimplantation of B+ and H+ decreases the layer transfer temperature from over 400–320 °C.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 4 )

Date of Publication:

Jul 2010

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