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Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6:C4F8 and self-limiting thermal oxidation on Si substrate

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6 Author(s)
Si-Young Park ; Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210-1272 ; Di Giacomo, Sandro J. ; Anisha, R. ; Berger, Paul R.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3455498 

Si-based nanowires with high aspect ratios have been fabricated using an inductively coupled plasma reactive ion etching (ICP-RIE) with a continuous processing gas mixture of fluorine-based SF6:C4F8 combined with a thermal oxidation technique. The subsequent thermal oxidation further reduced the nanowire diameter utilizing the self-limiting oxidation effect below the lithographic dimensions. Transmission electron microscopy analysis of the completed nanostructures revealed the total oxide thickness and the consumption of the Si core which determines the inner nanowire diameter. The final dimensions of the inner Si nanowire are about 600 nm tall and less than 25 nm wide using top-down processing techniques.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 4 )

Date of Publication:

Jul 2010

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