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With Ti doping, the transmittance of indium-tin-oxide (ITO) thin film is greatly enhanced in near the ultraviolet (UV) range. After annealing at 500 °C in vacuum, the transmittance of Ti-doped ITO (Ti : ITO) thin film at 380 nm is larger than that of pure ITO thin film by 22%. And, the resistivity of annealed Ti : ITO thin film is equivalent with that of ITO thin film (4.248×10-4 Ω·cm). Using Ti : ITO as TCL, the light output power of UV light-emitting diode (LED) is enhanced by 52.1%, compared to UV-LED (380 nm) with an ITO transparent conducting layer.