By Topic

Analysis of shock-induced polysilicon MEMS failure: a multi-scale finite element approach

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Mariani, S. ; Dipt. di Ing. Strutturale, Politec. di Milano, Milan, Italy ; Ghisi, A. ; Martini, R. ; Corigliano, A.
more authors

MEMS can be exposed to shock loadings, since they are often designed for portable devices. We recently investigated the effects of shocks on polysilicon inertial MEMS sensors within the framework of a top-down, uncoupled multi-scale approach, explicitly exploring three length-scales: a macroscopic one (package length-scale); a mesoscopic one (sensor length-scale); and a microscopic one (polycrystal length-scale). In this work we focus on meso-scale analyses, and suggest possible enhancements of their predictive capabilities. Specifically, we discuss: homogenization procedures to upscale (from micro-scale to meso-scale) the mechanical properties of the polysilicon film constituting the movable parts of the MEMS; a reduced-order model to efficiently track the vibrations of the whole MEMS sensor, without resorting to time demanding finite element simulations.

Published in:

Design Test Integration and Packaging of MEMS/MOEMS (DTIP), 2010 Symposium on

Date of Conference:

5-7 May 2010