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Improved Conversion Efficiency of Textured InGaN Solar Cells With Interdigitated Imbedded Electrodes

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7 Author(s)
Ray-Hua Horng ; Department of Electro-Optical Engineering, National Cheng Kung University, Tainan, Taiwan ; Mu-Tao Chu ; Hung-Ruei Chen ; Wen-Yih Liao
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Textured n-GaN/i-InGaN/p-GaN solar cells with interdigitated imbedded electrodes (IIEs) eliminating the electrode-shading loss have been investigated. In the absence of the electrode-shading effect, the optimized textured solar cell exhibits a conversion efficiency of 1.03%, which is 78% and 47% higher than those of the conventional structure and the structure with mirror coated on silicon substrate with electrode shading, respectively. The short-circuit current density of this textured HE device is about 0.65 mA/cm2, which is 71% and 44% higher than those of the two compared structures, respectively.

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IEEE Electron Device Letters  (Volume:31 ,  Issue: 6 )