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Fabrication and Characterization of the Charge-Plasma Diode

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6 Author(s)
Rajasekharan, B. ; MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands ; Hueting, R.J.E. ; Salm, C. ; van Hemert, T.
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We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-on-insulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )