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Temperature-Dependent I V Characteristics of a Vertical \hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As} Tunnel FET

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5 Author(s)
Mookerjea, S. ; Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA ; Mohata, D. ; Mayer, T. ; Narayanan, V.
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We report on the experimental temperature-dependent characteristics of vertical In0.53Ga0.47As tunnel field-effect transistors (TFETs) at low drain bias to provide key insight into its device operation and design. Leakage floor (IOFF) is determined by the ungated p+-i-n+ reverse bias leakage and is dominated by Shockley-Read-Hall generation-recombination current. The temperature dependence of subthreshold slope arises from tunneling into mid-gap states at the oxide-semiconductor interface, followed by thermal emission into the conduction band. At intermediate gate voltages, pure band-to-band tunneling dominates, while at higher gate voltages, current transport is diffusion limited. The temperature-dependent study of In0.53Ga0.47As TFET highlights the importance of passivating the III-V and dielectric interface.

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Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )