Cart (Loading....) | Create Account
Close category search window

A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Kai-Tak Lam ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Dawei Seah ; Sai-Kong Chin ; Bala Kumar, S.
more authors

The device physics and performance of heterojunction (HJ) graphene-nanoribbon (GNR) tunneling field-effect transistors (TFETs) with different designs are investigated in this letter. Due to the width-dependent energy bandgap (EG), a single GNR with spatially dependent width naturally yields an HJ structure to improve the device performance of a GNR TFET. By adding a small-EG region in the channel near the source and a large-EG region in the middle of the channel, the ON- and OFF-state currents (ION and IOFF, respectively) can be tuned. Last, we have studied the effect of channel length scaling on an HJ GNR TFET, and it has been observed that an ION/IOFF ratio of four orders of magnitude can be achieved with a channel length of 10 nm and a drain bias of 0.6 V.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )

Date of Publication:

June 2010

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.