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Horizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs

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6 Author(s)
Suligoj, T. ; Dept. of Electron., Microelectron., Comput. & Intell. Syst., Univ. of Zagreb, Zagreb, Croatia ; Koričić, M. ; Mochizuki, H. ; Morita, S.-i.
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A new horizontal current bipolar transistor (HCBT) with a single polysilicon region and a CMOS gate polysilicon near the n+ emitter region is integrated with CMOS technology with the addition of two or three masks (three or four masking steps) and a small number of additional fabrication steps. The single-poly HCBT with an optimized collector exhibits fT and fmax of 51 and 61 GHz, respectively, and an fTBVCEO product of 173 GHz · V, which are the best reported HCBT characteristics to date and among the highest performance Si BJTs. An HCBT with only two additional masks to CMOS has fT and fmax of 43 and 53 GHz, respectively, and an fTSVCEO product of 120 GHz · V. The developed innovative fabrication techniques enable a very low-cost BiCMOS platform for wireless communication circuits.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )