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Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on \hbox {TiO}_{2} Films Deposited by Radio-Frequency Magnetron Sputtering

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5 Author(s)
Huolin Huang ; Dept. of Phys., Xiamen Univ., Xiamen, China ; Yang, Weifeng ; Yannan Xie ; Xiaping Chen
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Metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) with Au electrodes, based on TiO2 thin films prepared by radio-frequency magnetron sputtering, are fabricated and characterized. The PDs exhibit a low dark current of 9.73 pA at 5-V bias and a high breakdown voltage of over 90 V, owing to the achievement of high-quality stoichiometric TiO2 films. Meanwhile, the high responsivity with a cutoff wavelength at around 380 nm and a large UV-to-visible rejection ratio (310 versus 400 nm) of more than three orders of magnitude are obtained, which suggest that the fabricated PDs are very promising in UV detection applications.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )

Date of Publication:

June 2010

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