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Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a \hbox {SiO}_{2} Photonic Quasi-Crystal Overgrowth

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5 Author(s)
H. W. Huang ; Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan ; J. K. Huang ; K. Y. Lee ; C. F. Lin
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GaN-based LEDs with a SiO2 oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 μm) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO2 oxide PQC structure on an n-GaN layer.

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IEEE Electron Device Letters  (Volume:31 ,  Issue: 6 )