By Topic

Intrinsic Performance Variability in Aligned Array CNFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Shuaib Salamat ; Network for Computational Nanotechnology and Department of Electrical Engineering, Purdue University, West Lafayette, IN, USA ; Xinning Ho ; John A. Rogers ; Muhammad Ashraful Alam

The I-V characteristic of carbon nanotube (CNT) transistors is dictated by the Schottky barrier (SB) at metal-nanotube interface. The SB is defined by the diameter of the CNT along with the source/drain metal and is presumed a device constant for single CNT transistors. Given the wide distribution of diameter of CVD-grown nanotubes, the presumption of single SB, however, is inappropriate for transistors with aligned array of CNTs. Indeed, array transistors with similar geometries and contact material can still exhibit considerable variation in threshold voltage (VT), on current (ION), and device resistance (Rd). We use measured diameter distribution within the framework of detailed numerical simulations to demonstrate that the diameter distribution of CNTs (in CNT FETs) plays a dominant role in defining the fluctuation of array transistors. Besides, it is argued that the large-scale integration of these devices within an IC would be feasible only if the distribution of diameter is considerably narrowed.

Published in:

IEEE Transactions on Nanotechnology  (Volume:10 ,  Issue: 3 )