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III-Nitride Schottky Rectifiers With an AlGaN/GaN/AlGaN/GaN Quadruple Layer and Their Applications to UV Detection

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6 Author(s)
P. C. Chang ; Department of Electrical Engineering, Kun Shan University, Tainan, TAIWAN, R.O.C. ; K. H. Lee ; S. J. Chang ; Y. K. Su
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III-nitride Schottky rectifiers (SRs) with (i.e., SR_A) and without (i.e., SR_B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR_A. Under reverse bias, it was found that SR_A showed a more than five orders magnitude smaller dark current than that in SR_B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR_A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.

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IEEE Sensors Journal  (Volume:10 ,  Issue: 4 )