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The authors present the latest results from the new technique of dark-field electron holography (HoloDark) which combines the advantages of the conventional transmission electron microscopy (TEM) with the precision of electron holography and is applicable to standard focused-ion beam (FIB) prepared samples. The authors will present measurements of strain in the active regions of a strained-silicon n-MOSFET device and a test structure for CESL induced strain.
Electron Devices Meeting (IEDM), 2009 IEEE International
Date of Conference: 7-9 Dec. 2009