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The authors present the latest results from the new technique of dark-field electron holography (HoloDark) which combines the advantages of the conventional transmission electron microscopy (TEM) with the precision of electron holography and is applicable to standard focused-ion beam (FIB) prepared samples. The authors will present measurements of strain in the active regions of a strained-silicon n-MOSFET device and a test structure for CESL induced strain.
Published in:
Electron Devices Meeting (IEDM), 2009 IEEE International
Date of Conference: 7-9 Dec. 2009
- Page(s):
- 1 - 4
- E-ISBN :
- 978-1-4244-5640-6
- Print ISBN:
- 978-1-4244-5639-0
- INSPEC Accession Number:
- 11207308
- Conference Location :
- Baltimore, MD
- Digital Object Identifier :
- 10.1109/IEDM.2009.5424424
- Product Type:
- Conference Publications
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