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Quantum simulations of hole transport in Si, Ge, SiGe and GaAs double-gate pMOSFETs: orientation and strain effects

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3 Author(s)
Cavassilas, Nicolas ; IM2NP, Marseille, France ; d'Ambrosio, S. ; Bescond, M.

We have developed a ballistic self-consistent code which couples the six-band k.p Hamiltonian to the Green function formalism. We investigate the influence of channel material (Si, Ge, SiGe and GaAs), crystallographic orientation ([100] and [110]) and strain (biaxial and uniaxial) on the ultimate double-gate pMOSFET performances. The results show that the best configuration is obtained with strained [100]-oriented Si devices.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009