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Self-consistent Monte Carlo device simulations under nano-scale device structures: role of Coulomb interaction, degeneracy, and boundary condition

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3 Author(s)
Nakanishi, K. ; Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan ; Uechi, T. ; Sano, N.

The self-consistent 3D Monte Carlo device simulator including the full Coulomb interaction is constructed. We demonstrate that the boundary condition for the electron distribution function plays an essential role to obtain correct transport characteristics and that the Coulomb interaction is indeed a key ingredient for reliable predictions of device properties.

Published in:
Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference: 7-9 Dec. 2009

Page(s):
1 - 4
E-ISBN :
978-1-4244-5640-6
Print ISBN:
978-1-4244-5639-0
INSPEC Accession Number:
11207441
Conference Location :
Baltimore, MD
Digital Object Identifier :
10.1109/IEDM.2009.5424417
Product Type:
Conference Publications

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