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1D thickness scaling study on amorphous Ge2Sb2Te5 (a-GST) has been successfully demonstrated without the help of ultra-fine lithography. Threshold switching voltage (Vth) linearly scales down to ~0.65 V at 6 nm scale, showing that stable read operation is possible at elevated temperature (70Â°C). Reset R drift shows no dependency on the a-GST thickness up to 6 nm regime. Thin a-GST shows enhanced thermal stability compared to thick a-GST.
Electron Devices Meeting (IEDM), 2009 IEEE International
Date of Conference: 7-9 Dec. 2009