Referenced Items are not available for this document.
1D thickness scaling study of phase change material (Ge
1D thickness scaling study on amorphous Ge2Sb2Te5 (a-GST) has been successfully demonstrated without the help of ultra-fine lithography. Threshold switching voltage (Vth) linearly scales down to ~0.65 V at 6 nm scale, showing that stable read operation is possible at elevated temperature (70°C). Reset R drift shows no dependency on the a-GST thickness up to 6 nm regime. Thin a-GST shows enhanced thermal stability compared to thick a-GST.
Published in:
Electron Devices Meeting (IEDM), 2009 IEEE International
Date of Conference: 7-9 Dec. 2009
- Page(s):
- 1 - 4
- E-ISBN :
- 978-1-4244-5640-6
- Print ISBN:
- 978-1-4244-5639-0
- INSPEC Accession Number:
- 11207438
- Conference Location :
- Baltimore, MD
- Digital Object Identifier :
- 10.1109/IEDM.2009.5424412
- Product Type:
- Conference Publications
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