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1D thickness scaling study of phase change material (Ge2Sb2Te5) using a pseudo 3-terminal device

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11 Author(s)
Byoung-Jae Bae ; Process Dev. Team, Samsung Electron. Co. Ltd., Yongin, South Korea ; SangBum Kim ; Yuan Zhang ; Youngkuk Kim
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1D thickness scaling study on amorphous Ge2Sb2Te5 (a-GST) has been successfully demonstrated without the help of ultra-fine lithography. Threshold switching voltage (Vth) linearly scales down to ~0.65 V at 6 nm scale, showing that stable read operation is possible at elevated temperature (70°C). Reset R drift shows no dependency on the a-GST thickness up to 6 nm regime. Thin a-GST shows enhanced thermal stability compared to thick a-GST.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009

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