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Micro-electro-mechanical (MEM) relays recently have been proposed for ultra-low-power digital logic applications because their ideal switching behavior can potentially allow the supply voltage (VDD) to be scaled down further than for CMOS devices. This paper describes design techniques to achieve reliable (high-endurance) MEM relay operation. Prototype relays fabricated using a CMOS-compatible process are demonstrated to operate with low surface adhesion force, adequately low on-state resistance (< 100 kÂ¿) over a wide temperature range (20Â°C-200Â°C), and >109 on/off switching cycles in N2 ambient without stiction- or welding-induced failure. Measured characteristics are well predicted by both ANSYS simulations and an analytical model. Using the calibrated analytical model, scaled relay technology is projected to achieve >10Ã energy savings over comparably sized CMOS technology at throughputs up to ~100 MHz.