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High gain, high linearity, L-band SiGe low noise amplifier with fully-integrated matching network

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4 Author(s)
Poh, J.C.H. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Peng Cheng ; Thrivikraman, T.K. ; Cressler, J.D.

This paper presents an L-band silicon-germanium (SiGe) low-noise amplifier (LNA) for use in Global Positioning System (GPS) receivers. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 1 × 1 mm2 (including the bondpads). The SiGe LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P1dB) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on

Date of Conference:

11-13 Jan. 2010