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A SiGe frequency quadrupler for M-QAM carrier recovery

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4 Author(s)
Ulusoy, A.C. ; Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany ; Gang Liu ; Trasser, A. ; Schumacher, H.

In this paper a frequency quadrupler circuit, integrated with a commercially available SiGe HBT technology (fT/fmax¿80/90 GHz) is presented. The quadrupler consists of two Gilbert cell mixers stacked as squarers. The measured maximum conversion gain is 0.6 dB for an input level of -9 dBm. The circuit is optimized for M-QAM carrier recovery, and the performance was tested by applying QPSK and 16QAM modulated signals with 4 Gbit/s data rate at the input. Both experimental and simulated results are presented. The fully integrated chip is operated from a single 2.5V DC supply and draws 22.3 mA current.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on

Date of Conference:

11-13 Jan. 2010

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