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Ultra-wideband low noise amplifier with shunt resistive feedback in 0.18µm CMOS process

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4 Author(s)
A. I. A. Galal ; Graduate School of Information Science and Electrical Engineering, Kyushu University, Motooka 744, Nishi-ku, Fukuoka 819-0395, Japan ; R. K. Pokharel ; Haruichi Kanay ; Keiji Yoshida

A CMOS low noise amplifier (LNA) for ultra-wideband (UWB) systems is presented. The proposed LNA achieve wide operating bandwidth for 3-10.6 GHz by using resistive shunt feedback topology. Two stage amplifiers and an inter stage circuit are designed to achieve wider gain bandwidth. The shunt resistive feedback are employed in input and output stage to provide wideband input matching with low noise figure (NF). This work is designed and fabricated in TSMC 0.18 μm CMOS process. The proposed UWB LNA achieves a measured flat gain 15 dB and has a noise figure of 4 dB over the entire band while consuming 21.5 mW of power. The measured third order intercept point IIP3 is 2.5 dBm.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on

Date of Conference:

11-13 Jan. 2010