By Topic

Fine line printed and plated contacts on high ohmic emitters enabling 20% cell efficiency

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
M. Hörteis ; Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, Germany ; D. Grote ; S. Binder ; A. Filipovic
more authors

The contact performance of seed-layer printed, fired and plated (SFP) contacts were studied on solar cells with different emitter sheet resistivities. For the seed layer of the SFP-contacts a special metal ink called SISC (seed layer ink for the metallization of solar cells), developed and fabricated at Fraunhofer ISE to contact lowly doped emitters was used. The doping profile and the surface concentration of active phosphorus are determined by secondary ion mass spectroscopy (SIMS) and by electrochemical capacitance voltage (ECV) measurements. Large-area Cz-silicon solar cells 12.5 ¿¿ 12.5 cm2 were fabricated with sheet resistivities between 40 ¿¿/sq. and 130 ¿¿/sq. The cells are metalized with SFP-contacts and conventional screen print contacts for comparison. High fill factors above 79% on solar cells with lowly doped emitters (sheet resistance of 130 ¿¿/sq.) could be achieved with SFP-contacts. In contrast, for screen-printed contacts using standard Ag paste the FFs for such lowly doped emitters are reduced to values around 55%. The difference in contact formation is explained by contact resistance measurements together with images from the metal semiconductor junction. Using the SISC ink solar cells with 45 ¿¿m wide contact structures were processed on a high efficiency cell structure with a passivated rear surface and a 110 ¿¿/sq. emitter a FF of 81% was achieved resulting in a cell efficiency of ¿¿=20.6%.

Published in:

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Date of Conference:

7-12 June 2009