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1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge

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12 Author(s)
Tien Khee Ng ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Soon Fatt Yoon ; Kian Hua Tan ; Wan Khai Loke
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The effect of different arsenic species (As2 or As4) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As2 overpressure for GaNAsSb growth.

Published in:

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Date of Conference:

7-12 June 2009