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An 18Ghz LNA Ga FET high gain amplifier for WLAN

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3 Author(s)
Alireza Habibzadeh ; Department of Electrical Engineering, IAU, Urmia, Iran ; Mohamad Naser Moghaddasi ; Mahdi Jalali

In this article we design a novel ka band low noise amplifier with high stability. in this design Ga FET used to high gain and low noise figure and conditional and unconditional stability. We applied a low noise cost solution for various Ka band receivers such as P-to-P radio, WLAN and UWB sensors. Finally circuit layout with ADS software is presented and very low noise figure about 1.3 dB and about 16 dB gain was taken.

Published in:

2009 Mediterrannean Microwave Symposium (MMS)

Date of Conference:

15-17 Nov. 2009