By Topic

Model design of non-volatile SRAM based on Magnetic Tunnel Junction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Kirubaraj, A.A. ; Sch. of Electr. Sci., SRM Univ., Chennai, India ; Emmanuel, A.A.

Recently there has been considerable interest in MTJ based MRAM because of its promising characteristics exhibiting high non-volatility combined with high density and radiation hardness as well as nondestructive readout (NDRO), very high radiation tolerance higher write/erase endurance compared to the FRAMs, and virtually unlimited power-off storage capability. This paper presents the design of static random access memory (SRAM) cell followed by MTJ that makes SRAM cell non-volatile, in which the output of SRAM cell having logic state 0 and 1 changes the direction of the moment of the free magnetic layer which is used for the information storage in MTJ device.

Published in:

Adaptive Science & Technology, 2009. ICAST 2009. 2nd International Conference on

Date of Conference:

14-16 Jan. 2009