Referenced Items are not available for this document.
This paper presents a 23-32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 ¿m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 ¿m BiCMOS technology and occupies an area of 0.25 mm2 . It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5-6.3 dB, linearity higher than -6.4 dBm with a power consumption of 13 mW from a 1.5 V supply.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:45
,
Issue:
2
)
Date of Publication: Feb. 2010
- Page(s):
- 289 - 299
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 11137475
- Digital Object Identifier :
- 10.1109/JSSC.2009.2038126
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 02 February 2010
- Issue Date :
- Feb. 2010
- Sponsored by :
- IEEE Solid-State Circuits Society
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