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A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier

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3 Author(s)
El-Nozahi, M. ; Dept. of Electr. & Comput. Eng., Texas A&M Univ., College Station, TX, USA ; Sanchez-Sinencio, E. ; Entesari, K.

This paper presents a 23-32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 ¿m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 ¿m BiCMOS technology and occupies an area of 0.25 mm2 . It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5-6.3 dB, linearity higher than -6.4 dBm with a power consumption of 13 mW from a 1.5 V supply.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:45 ,  Issue: 2 )