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Germanium channel MOSFETs: Opportunities and challenges

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7 Author(s)
H. Shang ; IBM Systems and Technology Group, 2070 Route 52, Hopewell Junction, New York 12533, USA ; M. M. Frank ; E. P. Gusev ; J. O. Chu
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This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:50 ,  Issue: 4.5 )