Referenced Items are not available for this document.
This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented.
Published in:
IBM Journal of Research and Development
(Volume:50
,
Issue:
4.5
)
Date of Publication: July 2006
- Page(s):
- 377 - 386
- ISSN :
- 0018-8646
- Digital Object Identifier :
- 10.1147/rd.504.0377
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 April 2010
- Issue Date :
- July 2006
- Sponsored by :
- IBM
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
