By Topic

InGaAs LDMOS power semiconductor device performances

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yidong Liu ; Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA ; Yuan, J.-S. ; Steighner, J.

An n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation. Comparison between In0.65Ga0.35As Si devices is made. The InGaAs LDMOS shows a 92% improvement in Ron × Qg over its silicon counterpart.

Published in:

Power Electronics and Drive Systems, 2009. PEDS 2009. International Conference on

Date of Conference:

2-5 Nov. 2009