Referenced Items are not available for this document.
A p-channel memory with Ge/Si heteronanocrystals (HNCs) as the floating gate was fabricated and tested. The nanocrystals (NCs) were synthesized by low-pressure chemical vapor deposition of Si NCs followed by selective growth of Ge on top of Si. Both hole and electron storages were characterized in Ge/Si HNC memory. Fowler-Nordheim and hot carrier injection programming operations were studied. Compared to Si NC memory, enhanced memory performances were demonstrated in Ge/Si HNC memory in terms of longer retention, larger storage capability, and faster programming.
Published in:
Nanotechnology, IEEE Transactions on
(Volume:10
,
Issue:
2
)
Date of Publication: March 2011
- Page(s):
- 284 - 290
- ISSN :
- 1536-125X
- INSPEC Accession Number:
- 11851172
- Digital Object Identifier :
- 10.1109/TNANO.2009.2039488
- Product Type:
- Journals & Magazines
- Date of Publication :
- 08 January 2010
- Date of Current Version :
- 07 March 2011
- Issue Date :
- March 2011
- Sponsored by :
- IEEE Nanotechnology Council
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