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InSb nanowire field-effect transistors — Electrical characterization and material analysis

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6 Author(s)
Candebat, D. ; Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Zhao, Y. ; Sandow, C. ; Koshel, B.
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In summary we have demonstrated for the first time the fabrication and characterization of InSb NWFETs. Clear evidence of a small band gap semiconductor with device characteristics consistent with an Eg-value of around 160 meV to 180 meV have been provided using a simple yet novel data analysis. Our data can consistently be explained assuming two distinct regions in the device with one being a gate-independent shunt resistance. The presented device characteristics are a starting point to develop an understanding of InSb NWFETs that can lead to new device architectures such as tunneling field-effect transistors, highly linear amplifiers, and other high-speed, low-power applications.

Published in:

Device Research Conference, 2009. DRC 2009

Date of Conference:

22-24 June 2009