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Reduction of hysteresis in mobility measurements of carbon nanotube transistors by pulsed I–V characterization

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4 Author(s)
Estrada, D. ; Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA ; Dutta, S. ; Liao, Albert ; Pop, E.

In this paper the effect of pulsed current-voltage (ID-VGS) measurements on the hysteretic behavior of carbon nanotube field-effect transistors (CNTFET) on SiO2, and the subsequent mobility extraction is studied. It is found that hysteresis decreases with longer pulse delays and higher ambient temperature, and can be almost entirely eliminated at -10 s pulse intervals and -180 °C. Moreover, mobility curves extracted in such conditions approach a unified, "true" value for each nanotube, unlike the less reliable conventional methods which rely either on the forward or reverse voltage sweeps.

Published in:

Device Research Conference, 2009. DRC 2009

Date of Conference:

22-24 June 2009