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Comparing InSb, InAs, and InSb/InAs nanowire MOSFETs

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5 Author(s)
Nilsson, H. ; Solid State Phys., Lund Univ., Lund, Sweden ; Caroff, Philippe ; Lind, E. ; Thelander, C.
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Various channel materials are considered for the lll-V MOSFETs. Among the III /Vs, InSb has the highest mobility and the lowest effective mass. We may hence expect a large source injection velocity, but also parasitic leakage due to tunneling. Furthermore, the low density of states in th e conduction band implies a small quantum capacitance. These effects may be studied in nanowire devices. So far, there are very few reports on detailed studies o f transport in InSb nanowire MOSFETs, and the possibility to form heterostructures has not been exploited. In this paper, we present detailed characterization of InSb nanowire MOSFETs that is combined with a comparison to InAs and InSb/lnAs nanowire MOSFETs formed on the same nanowire.

Published in:

Device Research Conference, 2009. DRC 2009

Date of Conference:

22-24 June 2009