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Various channel materials are considered for the lll-V MOSFETs. Among the III /Vs, InSb has the highest mobility and the lowest effective mass. We may hence expect a large source injection velocity, but also parasitic leakage due to tunneling. Furthermore, the low density of states in th e conduction band implies a small quantum capacitance. These effects may be studied in nanowire devices. So far, there are very few reports on detailed studies o f transport in InSb nanowire MOSFETs, and the possibility to form heterostructures has not been exploited. In this paper, we present detailed characterization of InSb nanowire MOSFETs that is combined with a comparison to InAs and InSb/lnAs nanowire MOSFETs formed on the same nanowire.