By Topic

Scalable bipolar transistor model including quasi-saturation effect for BiCMOS application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yong Dai ; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA ; J. S. Yuan ; Jiling Song ; P. Campbell

A Gummel-Poon like bipolar transistor model including effects of quasi-saturation is derived. The model includes multi-dimensional effects such as sidewall injection, emitter current crowding, and collector current spreading. A current-dependent epi-layer collector resistance is proposed to model collector conductivity modulation in quasi-saturation. The model has been compared with measurement. Good agreement between the model predictions and experimental data has been obtained

Published in:

Southcon/96. Conference Record

Date of Conference:

25-27 Jun 1996