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Low temperature bonding of epitaxial lift off devices with AuSn

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4 Author(s)
Rainer Dohle, G. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Drabik, Timothy J. ; Callahan, J.J. ; Martin, K.P.

The increasing demand for more advanced optoelectronic integrated circuits has created the need for bonding materials with different lattice constants (for example, GaAs on Si). In this paper, we report a new way for the bonding of epitaxial lift off (ELO) devices onto substrates. The multilayer structures investigated in this work produce a resulting AuSn alloy with approximately 84 wt.% gold, but can be bonded with a peak temperature of 235°C. The bonded samples were investigated with several standard surface analysis techniques like optical microscopy, scanning electron microscopy (SEM), and energy dispersive X-ray analysis (EDX) as well as mechanical tests. The results of our research allowed us to optimize the layer structure, the bonding parameters as well as the diffusion barriers

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Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on  (Volume:19 ,  Issue: 3 )