Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Low temperature bonding of epitaxial lift off devices with AuSn

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Rainer Dohle, G. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Drabik, Timothy J. ; Callahan, J.J. ; Martin, K.P.

The increasing demand for more advanced optoelectronic integrated circuits has created the need for bonding materials with different lattice constants (for example, GaAs on Si). In this paper, we report a new way for the bonding of epitaxial lift off (ELO) devices onto substrates. The multilayer structures investigated in this work produce a resulting AuSn alloy with approximately 84 wt.% gold, but can be bonded with a peak temperature of 235°C. The bonded samples were investigated with several standard surface analysis techniques like optical microscopy, scanning electron microscopy (SEM), and energy dispersive X-ray analysis (EDX) as well as mechanical tests. The results of our research allowed us to optimize the layer structure, the bonding parameters as well as the diffusion barriers

Published in:

Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on  (Volume:19 ,  Issue: 3 )