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Transport mechanism in aluminum nitride-metal multilayer junctions

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2 Author(s)
Kabulski, A. ; Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia, 26505 ; Korakakis, D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3258658 

The electrical behavior of aluminum nitride (AlN) thin film structures consisting of alternating AlN and platinum (Pt) layers has been studied. Typical single layer AlN thin films are insulating due to the wide bandgap properties of the material, but stacked AlN–Pt structures can be conductive. Conductivity studies of the structures indicate regions of semiconductor behavior as well as regions where tunneling occurs. The thickness of the AlN layers, as well as the number of AlN–Pt interfaces in the structures, is found to impact the conduction and tunneling mechanism. Fowler–Nordheim theory and plots were used to determine trends in the electrical behavior and it was found that the field enhancement factor depends on the total thickness of the AlN layers, while the conduction mechanism, tunneling, or multistep hopping between midbandgap states, depends on the number of interfaces as well.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 6 )

Date of Publication:

Nov 2009

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