Trap space charge limited current in pulsed laser deposited AlN:Cr films

AlN films, doped with Cr, were deposited on p-Si substrates by pulsed laser deposition (PLD). Al-PLD AlN:Cr-Si MIS structures were formed and their current-voltage and 1 MHz admittance characteristics were measured. The analysis of the direct and alternating current conductance and capacitance dependences of these MIS structures on applied voltage revealed that the charge transport in these films is carried out by the mechanism of trap space charge limited current.