By Topic

Defect production in silicon and germanium by low temperature irradiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
S. Lazanu ; National Institute of Materials Physics, POBox MG-7, Bucharest-Magurele, Romania ; I. Lazanu ; A. Lepadatu ; I. Stavarache

In this communication, we study the production of defects by energetic ions in silicon and germanium, at very low temperatures, as dependencies of non-ionizing energy loss and number of displacements on the ion kinetic energy, and also the partition of the energy deposited between ionization, creation of defects and phonons, short time after the interaction.

Published in:

2009 International Semiconductor Conference  (Volume:2 )

Date of Conference:

12-14 Oct. 2009