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Advanced carrier density enhancement technologies in insulated gate bipolar transistors

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4 Author(s)
Hsu, W.C.-W. ; Dept. of Eng., Univ. of Cambridge, Cambridge, UK ; Udrea, F. ; Ho-Tai Chen ; Wei-Chieh Lin

Continuous efforts have been made to improve the IGBT performance, especially in terms of the trade-off between the on-state voltages and turn-off energy losses. Recently the carrier density enhancement (CDE) technologies, which aim at increasing the carrier densities near the emitter/cathode side of the IGBTs, are of great interest to the industry. In this paper, an insight introduction of the state-of-the-art CDE technologies is provided. In addition, a novel dual-gate trench IGBT which utilises an embedded low-gain PNP and thyristor to achieve an ultra-low on-state voltage without deteriorating the switching speed is presented.

Published in:

Semiconductor Conference, 2009. CAS 2009. International  (Volume:2 )

Date of Conference:

12-14 Oct. 2009