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Low Dose Rate Test Results for National Semiconductor's ELDRS-Free LM136-2.5 Bipolar Reference

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4 Author(s)
Kruckmeyer, K. ; Nat. Semicond., Santa Clara, CA, USA ; McGee, L. ; Brown, B. ; Miller, L.

Low dose rate (LDR) and high dose rate (HDR) total ionizing dose (TED) test results, drift calculations and an enhanced low dose rate sensitivity (ELDRS) characterization are presented for National Semiconductor's "ELDRS-free" bipolar reference, LM136-2.5 and compared to data from older versions of the product.

Published in:
Radiation Effects Data Workshop, 2009 IEEE

Date of Conference: 20-24 July 2009

Page(s):
47 - 50
Print ISBN:
978-1-4244-5092-3
INSPEC Accession Number:
10977519
Conference Location :
Quebec City, QC
Digital Object Identifier :
10.1109/REDW.2009.5336314
Product Type:
Conference Publications

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