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Heavy-Ion and Total Ionizing Dose (TID) Performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

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6 Author(s)
Romney R. Katti ; Honeywell Int., Inc., Plymouth, MN, USA ; John Lintz ; Lance Sundstrom ; Tony Marques
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An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm2/mg for fluences to 108 ions/cm2; and TED hardness in excess of 1 Mrad.

Published in:

2009 IEEE Radiation Effects Data Workshop

Date of Conference:

20-24 July 2009